Japanese multinational conglomerate Toshiba Corporation has announced the development of the world's first 48-layer three dimensional stacked cell structure flash memory 'BiCS', a 2-bit-per-cell 128-gigabit (16 gigabytes) device.
BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write /erase endurance and boosts write speed, and is suited for use in diverse applications, primarily solid state drives (SSD).
Since making the world's first announcement of technology for 3D Flash memory, Toshiba has continued development towards optimising mass production.
Toshiba is also proactively promoting the migration to 3D Flash memory by rolling out a product portfolio that emphasizes large capacity applications, such as SSD, in order to meet further market growth in 2016 and beyond,.
The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories.
Fab2 is now under construction and will be completed in the first half of 2016, to meet growing demand for flash memory.