The technological breakthrough hails opportunities for the development of smaller and cheaper sensors for various fields such as consumer electronics, information and communication technology, biotechnology and automotive.
When an external magnetic field is applied to certain materials, a change in electrical resistance, also known as magnetoresistance, occurs as the electrons are deflected.
The discovery of magnetoresistance paved the way for magnetic field sensors used in hard disk drives and other devices, revolutionising how data is stored and read.
The new hybrid sensor developed by a team led by Associate Professor Yang Hyunsoo from National University of Singapore (NUS) may finally meet these requirements.
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The sensor, made of graphene and boron nitride, comprises a few layers of carrier-moving channels, each of which can be controlled by the magnetic field.
The researchers characterised the new sensor by testing it at various temperatures, angles of magnetic field, and with a different pairing material.
"We found that a bilayer structure of graphene and boron nitride displays an extremely large response with magnetic fields. This combination can be utilised for magnetic field sensing applications," said Kalon, who worked in the team that also included Professor Thirumalai Venkatesan, Director of NUSNNI.
Compared to other existing sensors, which are commonly made of silicon and indium antimonide, the group's hybrid sensor displayed much higher sensitivity to magnetic fields.
Potential applications for the new sensor include the automotive industry, where sensors in cars, located in devices like flow meters, position sensors and interlocks, are currently made of silicon or indium antimonide.
The research was published in the journal Nature Communications.